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Package Marking and Ordering Information
Device Marking
FCB20N60
Device
FCB20N60TM
Package
D 2 -PAK
Reel Size
330mm
Tape Width
24m
Quantity
800
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V,I D = 250 ? A, T C = 25 o C
V GS = 0 V,I D = 250 ? A, T C = 150 o C
I D = 250 ? A, Referenced to 25 o C
V GS = 0 V, I D = 20 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, V GS = 0 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/ o C
V
? A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10 V, I D = 10 A
V DS = 40 V, I D = 10 A
3.0
-
-
-
0.15
17
5.0
0.19
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V
f = 1.0 MHz
V DS = 480 V, V GS = 0 V, f = 1.0 MHz
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
-
-
2370
1280
95
65
165
3080
1665
-
85
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 20 A
R G = 25 ?
(Note 4)
-
-
-
-
62
140
230
65
135
290
470
140
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480 V, I D = 20 A,
V GS = 10 V
(Note 4)
-
-
-
75
13.5
36
98
18
-
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
20
60
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 20 A
V GS = 0 V, I SD = 20 A
dI F /dt = 100 A/ ? s
-
-
-
-
530
10.5
1.4
-
-
V
ns
? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I AS = 10 A, V DD = 50 V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ?? 20 A, di/dt ? 200 A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2005 Fairchild Semiconductor Corporation
FCB20N60 Rev. C1
2
www.fairchildsemi.com
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